半导体物理性能手册 第3卷 上 英文2025|PDF|Epub|mobi|kindle电子书版本百度云盘下载

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1 Magnesium Oxide（MgO）1

1.1 Structural Properties1

1.1.1 Ionicity1

1.1.2 Elemental Isotopic Abundance and Molecular Weight1

1.1.3 Crystal Structure and Space Group2

1.1.4 Lattice Constant and Its Related Parameters2

1.1.5 Structural Phase Transition2

1.1.6 Cleavage Plane3

1.2 Thermal Properties3

1.2.1 Melting Point and Its Related Parameters3

1.2.2 Specific Heat4

1.2.3 Debye Temperature5

1.2.4 Thermal Expansion Coefficient6

1.2.5 Thermal Conductivity and Diffusivity6

1.3 Elastic Properties7

1.3.1 Elastic Constant7

1.3.2 Third-Order Elastic Constant9

1.3.3 Young's Modulus,Poisson's Ratio,and Similar9

1.3.4 Microhardness10

1.3.5 Sound Velocity10

1.4 Phonons and Lattice Vibronic Properties11

1.4.1 Phonon Dispersion Relation11

1.4.2 Phonon Frequency12

1.4.3 Mode Grüneisen Parameter13

1.4.4 Phonon Deformation Potential13

1.5 Collective Effects and Related Properties13

1.5.1 Piezoelectric Constant13

1.5.2 Fr？hlich Coupling Constant13

1.6 Energy-Band Structure:Energy-Band Gaps13

1.6.1 Basic Properties13

1.6.2 Eo-Gap Region15

1.6.3 Higher-Lying Direct Gap15

1.6.4 Lowest Indirect Gap16

1.6.5 Conduction-Valley Energy Separation16

1.6.6 Direct-Indirect-Gap Transition Pressure16

1.7 Energy-Band Structure:Electron and Hole Effective Masses17

1.7.1 Electron Effective Mass:Γ Valley17

1.7.2 Electron Effective Mass:Satellite Valley17

1.7.3 Hole Effective Mass17

1.8 Electronic Deformation Potential17

1.8.1 Intravalley Deformation Potential:Γ Point17

1.8.2 Intravalley Deformation Potential:High-Symmetry Points17

1.8.3 Intervalley Deformation Potential17

1.9 Electron Affinity and Schottky Barrier Height18

1.9.1 Electron Affinity18

1.9.2 Schottky Barrier Height18

1.10 Optical Properties18

1.10.1 Summary of Optical Dispersion Relations18

1.10.2 The Reststrahlen Region19

1.10.3 At or Near the Fundamental Absorption Edge20

1.10.4 The Interband Transition Region22

1.10.5 Free-Carrier Absorption and Related Phenomena22

1.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties22

1.11.1 Elastooptic Effect22

1.11.2 Linear Electrooptic Constant23

1.11.3 Quadratic Electrooptic Constant23

1.11.4 Franz-Keldysh Effect23

1.11.5 Nonlinear Optical Constant23

1.12 Carrier Transport Properties23

1.12.1 Low-Field Mobility:Electrons23

1.12.2 Low-Field Mobility:Holes23

1.12.3 High-Field Transport:Electrons23

1.12.4 High-Field Transport:Holes23

1.12.5 Minority-Carrier Transport:Electrons in p-Type Materials23

1.12.6 Minority-Carrier Transport:Holes in n-Type Materials23

1.12.7 Impact Ionization Coefficient24

2 Zincblende Magnesium Sulphide（β-MgS）25

2.1 Structural Properties25

2.1.1 Ionicity25

2.1.2 Elemental Isotopic Abundance and Molecular Weight25

2.1.3 Crystal Structure and Space Group26

2.1.4 Lattice Constant and Its Related Parameters26

2.1.5 Structural Phase Transition27

2.1.6 Cleavage Plane27

2.2 Thermal Properties27

2.2.1 Melting Point and Its Related Parameters27

2.2.2 Specific Heat27

2.2.3 Debye Temperature27

2.2.4 Thermal Expansion Coefficient27

2.2.5 Thermal Conductivity and Diffusivity27

2.3 Elastic Properties28

2.3.1 Elastic Constant28

2.3.2 Third-Order Elastic Constant28

2.3.3 Young's Modulus,Poisson's Ratio,and Similar28

2.3.4 Microhardness29

2.3.5 Sound Velocity29

2.4 Phonons and Lattice Vibronic Properties30

2.4.1 Phonon Dispersion Relation30

2.4.2 Phonon Frequency30

2.4.3 Mode Grüneisen Parameter30

2.4.4 Phonon Deformation Potential30

2.5 Collective Effects and Related Properties30

2.5.1 Piezoelectric Constant30

2.5.2 Fr？hlich Coupling Constant30

2.6 Energy-Band Structure:Energy-Band Gaps31

2.6.1 Basic Properties31

2.6.2 Eo-Gap Region31

2.6.3 Higher-Lying Direct Gap32

2.6.4 Lowest Indirect Gap32

2.6.5 Conduction-Valley Energy Separation32

2.6.6 Direct-Indirect-Gap Transition Pressure32

2.7 Energy-Band Structure:Electron and Hole Effective Masses32

2.7.1 Electron Effective Mass:Γ Valley32

2.7.2 Electron Effective Mass:Satellite Valley33

2.7.3 Hole Effective Mass33

2.8 Electronic Deformation Potential34

2.8.1 Intravalley Deformation Potential:Γ Point34

2.8.2 Intravalley Deformation Potential:High-Symmetry Points34

2.8.3 Intervalley Deformation Potential34

2.9 Electron Affinity and Schottky Barrier Height34

2.9.1 Electron Affinity34

2.9.2 Schottky Barrier Height35

2.10 Optical Properties35

2.10.1 Summary of Optical Dispersion Relations35

2.10.2 The Reststrahlen Region35

2.10.3 At or Near the Fundamental Absorption Edge35

2.10.4 The Interband Transition Region35

2.10.5 Free-Carrier Absorption and Related Phenomena35

2.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties35

2.11.1 Elastooptic Effect35

2.11.2 Linear Electrooptic Constant35

2.11.3 Quadratic Electrooptic Constant35

2.11.4 Franz-Keldysh Effect35

2.11.5 Nonlinear Optical Constant35

2.12 Carrier Transport Properties36

2.12.1 Low-Field Mobility:Electrons36

2.12.2 Low-Field Mobility:Holes36

2.12.3 High-Field Transport:Electrons36

2.12.4 High-Field Transport:Holes36

2.12.5 Minority-Carrier Transport:Electrons inp-Type Materials36

2.12.6 Minority-Carrier Transport:Holes inn-Type Materials36

2.12.7 Impact Ionization Coefficient36

3 Zincblende Magnesium Selenide（β-MgSe）37

3.1 Structural Properties37

3.1.1 Ionicity37

3.1.2 Elemental Isotopic Abundance and Molecular Weight37

3.1.3 Crystal Structure and Space Group38

3.1.4 Lattice Constant and Its Related Parameters38

3.1.5 Structural Phase Transition39

3.1.6 Cleavage Plane39

3.2 Thermal Properties39

3.2.1 Melting Point and Its Related Parameters39

3.2.2 Specific Heat39

3.2.3 Debye Temperature39

3.2.4 Thermal Expansion Coefficient39

3.2.5 Thermal Conductivity and Diffusivity39

3.3 Elastic Properties40

3.3.1 Elastic Constant40

3.3.2 Third-Order Elastic Constant40

3.3.3 Young's Modulus,Poisson's Ratio,and Similar40

3.3.4 Microhardness41

3.3.5 Sound Velocity41

3.4 Phonons and Lattice Vibronic Properties42

3.4.1 Phonon Dispersion Relation42

3.4.2 Phonon Frequency42

3.4.3 Mode Grüneisen Parameter42

3.4.4 Phonon Deformation Potential42

3.5 Collective Effects and Related Properties43

3.5.1 Piezoelectric Constant43

3.5.2 Fr？hlich Coupling Constant43

3.6 Energy-Band Structure:Energy-Band Gaps43

3.6.1 Basic Properties43

3.6.2 E0-Gap Region44

3.6.3 Higher-Lying Direct Gap45

3.6.4 Lowest Indirect Gap45

3.6.5 Conduction-Valley Energy Separation45

3.6.6 Direct-Indirect-Gap Transition Pressure45

3.7 Energy-Band Structure:Electron and Hole Effective Masses45

3.7.1 Electron Effective Mass:Γ Valley45

3.7.2 Electron Effective Mass:Satellite Valley46

3.7.3 Hole Effective Mass46

3.8 Electronic Deformation Potential47

3.8.1 Intravalley Deformation Potential:Γ Point47

3.8.2 Intravalley Deformation Potential:High-Symmetry Points48

3.8.3 Intervalley Deformation Potential48

3.9 Electron Affinity and Schottky Barrier Height48

3.9.1 Electron Affinity48

3.9.2 S chottky Barrier Height48

3.10 Optical Properties48

3.10.1 Summary of Optical Dispersion Relations48

3.10.2 The Reststrahlen Region48

3.10.3 At or Near the Fundamental Absorption Edge48

3.10.4 The Interband Transition Region49

3.10.5 Free-Carrier Absorption and Related Phenomena49

3.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties49

3.11.1 Elastooptic Effect49

3.11.2 Linear Electrooptic Constant49

3.11.3 Quadratic Electrooptic Constant49

3.11.4 Franz-Keldysh Effect49

3.11.5 Nonlinear Optical Constant50

3.12 Carrier Transport Properties50

3.12.1 Low-Field Mobility:Electrons50

3.12.2 Low-Field Mobility:Holes50

3.12.3 High-Field Transport:Electrons50

3.12.4 High-Field Transport:Holes50

3.12.5 Minority-Carrier Transport:Electrons in p-Type Materials50

3.12.6 Minority-Carrier Transport:Holes in n-Type Materials50

3.12.7 Impact Ionization Coefficient50

4 Zincblende Magnesium Telluride（β-MgTe）51

4.1 Structural Properties51

4.1.1 Ionicity51

4.1.2 Elemental Isotopic Abundance and Molecular Weight51

4.1.3 Crystal Structure and Space Group52

4.1.4 Lattice Constant and Its Related Parameters52

4.1.5 Structural Phase Transition53

4.1.6 Cleavage Plane53

4.2 Thermal Properties53

4.2.1 Melting Point and Its Related Parameters53

4.2.2 Specific Heat53

4.2.3 Debye Temperature53

4.2.4 Thermal Expansion Coefficient53

4.2.5 Thermal Conductivity and Diffusivity53

4.3 Elastic Properties54

4.3.1 Elastic Constant54

4.3.2 Third-Order Elastic Constant54

4.3.3 Young's Modulus,Poisson's Ratio,and Similar54

4.3.4 Microhardness55

4.3.5 Sound Velocity55

4.4 Phonons and Lattice Vibronic Properties56

4.4.1 Phonon Dispersion Relation56

4.4.2 Phonon Frequency56

4.4.3 Mode Griineisen Parameter56

4.4.4 Phonon Deformation Potential56

4.5 Collective Effects and Related Properties56

4.5.1 Piezoelectric Constant56

4.5.2 Fr？hlich Coupling Constant56

4.6 Energy-Band Structure:Energy-Band Gaps57

4.6.1 Basic Properties57

4.6.2 Eo-Gap Region58

4.6.3 Higher-Lying Direct Gap59

4.6.4 Lowest Indirect Gap59

4.6.5 Conduction-Valley Energy Separation59

4.6.6 Direct-Indirect-Gap Transition Pressure59

4.7 Energy-Band Structure:Electron and Hole Effective Masses60

4.7.1 Electron Effective Mass:Γ Valley60

4.7.2 Electron Effective Mass:Satellite Valley60

4.7.3 Hole Effective Mass60

4.8 Electronic Deformation Potential61

4.8.1 Intravalley Deformation Potential:Γ Point61

4.8.2 Intravalley Deformation Potential:High-Symmetry Points61

4.8.3 Intervalley Deformation Potential61

4.9 Electron Affinity and Schottky Barrier Height61

4.9.1 Electron Affinity61

4.9.2 Schottky Barrier Height62

4.10 Optical Properties62

4.10.1 Summary of Optical Dispersion Relations62

4.10.2 The Reststrahlen Region62

4.10.3 At or Near the Fundamental Absorption Edge62

4.10.4 The Interband Transition Region63

4.10.5 Free-Carrier Absorption and Related Phenomena63

4.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties63

4.11.1 Elastooptic Effect63

4.11.2 Linear Electrooptic Constant63

4.11.3 Quadratic Electrooptic Constant63

4.11.4 Franz-Keldysh Effect63

4.11.5 Nonlinear Optical Constant63

4.12 Carrier Transport Properties63

4.12.1 Low-Field Mobility:Electrons63

4.12.2 Low-Field Mobility:Holes63

4.12.3 High-Field Transport:Electrons64

4.12.4 High-Field Transport:Holes64

4.12.5 Minority-Carrier Transport:Electrons in p-Type Materials64

4.12.6 Minority-Carrier Transport:Holes in n-Type Materials64

4.12.7 Impact Ionization Coefficient64

5 Zinc Oxide（ZnO）65

5.1 Structural Properties65

5.1.1 Ionicity65

5.1.2 Elemental Isotopic Abundance and Molecular Weight65

5.1.3 Crystal Structure and Space Group66

5.1.4 Lattice Constant and Its Related Parameters66

5.1.5 Structural Phase Transition66

5.1.6 Cleavage Plane67

5.2 Thermal Properties67

5.2.1 Melting Point and Its Related Parameters67

5.2.2 Specific Heat68

5.2.3 Debye Temperature68

5.2.4 Thermal Expansion Coefficient68

5.2.5 Thermal Conductivity and Diffusivity69

5.3 Elastic Properties71

5.3.1 Elastic Constant71

5.3.2 Third-Order Elastic Constant72

5.3.3 Young's Modulus,Poisson's Ratio,and Similar72

5.3.4 Microhardness73

5.3.5 Sound Velocity73

5.4 Phonons and Lattice Vibronic Properties73

5.4.1 Phonon Dispersion Relation73

5.4.2 Phonon Frequency74

5.4.3 Mode Grüneisen Parameter74

5.4.4 Phonon Deformation Potential75

5.5 Collective Effects and Related Properties75

5.5.1 Piezoelectric Constant75

5.5.2 Fr？hlich Coupling Constant75

5.6 Energy-Band Structure:Energy-Band Gaps76

5.6.1 Basic Properties76

5.6.2 Eo-Gap Region77

5.6.3 Higher-Lying Direct Gap81

5.6.4 Lowest Indirect Gap81

5.6.5 Conduction-Valley Energy Separation82

5.6.6 Direct-Indirect-Gap Transition Pressure82

5.7 Energy-Band Structure:Electron and Hole Effective Masses82

5.7.1 Electron Effective Mass:Γ Valley82

5.7.2 Electron Effective Mass:Satellite Valley83

5.7.3 Hole Effective Mass83

5.8 Electronic Deformation Potential84

5.8.1 Intravalley Deformation Potential:Γ Point84

5.8.2 Intravalley Deformation Potential:High-Symmetry Points84

5.8.3 Intervalley Deformation Potential84

5.9 Electron Affinity and Schottky Barrier Height85

5.9.1 Electron Affinity85

5.9.2 Schottky Barrier Height85

5.10 Optical Properties86

5.10.1 Summary of Optical Dispersion Relations86

5.10.2 The Reststrahlen Region87

5.10.3 At or Near the Fundamental Absorption Edge88

5.10.4 The Interband Transition Region91

5.10.5 Free-Carrier Absorption and Related Phenomena92

5.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties92

5.11.1 Elastooptic Effect92

5.11.2 Linear Electrooptic Constant93

5.11.3 Quadratic Electrooptic Constant93

5.11.4 Franz-Keldysh Effect94

5.11.5 Nonlinear Optical Constant94

5.12 Carrier Transport Properties95

5.12.1 Low-Field Mobility:Electrons95

5.12.2 Low-Field Mobility:Holes97

5.12.3 High-Field Transport:Electrons97

5.12.4 High-Field Transport:Holes97

5.12.5 Minority-Carrier Transport:Electrons in p-Type Materials97

5.12.6 Minority-Carrier Transport:Holes in n-Type Materials97

5.12.7 Impact Ionization Coefficient97

6 Wurtzite Zinc Sulphide（α-ZnS）99

6.1 Structural Properties99

6.1.1 Ionicity99

6.1.2 Elemental Isotopic Abundance and Molecular Weight99

6.1.3 Crystal Structure and Space Group100

6.1.4 Lattice Constant and Its Related Parameters100

6.1.5 Structural Phase Transition100

6.1.6 Cleavage Plane100

6.2 Thermal Properties101

6.2.1 Melting Point and Its Related Parameters101

6.2.2 Specific Heat101

6.2.3 Debye Temperature101

6.2.4 Thermal Expansion Coefficient101

6.2.5 Thermal Conductivity and Diffusivity102

6.3 Elastic Properties102

6.3.1 Elastic Constant102

6.3.2 Third-Order Elastic Constant103

6.3.3 Young's Modulus,Poisson's Ratio,and Similar103

6.3.4 Microhardness104

6.3.5 Sound Velocity104

6.4 Phonons and Lattice Vibronic Properties105

6.4.1 Phonon Dispersion Relation105

6.4.2 Phonon Frequency105

6.4.3 Mode Grüneisen Parameter105

6.4.4 Phonon Deformation Potential105

6.5 Collective Effects and Related Properties106

6.5.1 Piezoelectric Constant106

6.5.2 Fr？hlich Coupling Constant106

6.6 Energy-Band Structure:Energy-Band Gaps106

6.6.1 Basic Properties106

6.6.2 E0-Gap Region108

6.6.3 Higher-Lying Direct Gap109

6.6.4 Lowest Indirect Gap110

6.6.5 Conduction-Valley Energy Separation110

6.6.6 Direct-Indirect-Gap Transition Pressure110

6.7 Energy-Band Structure:Electron and Hole Effective Masses110

6.7.1 Electron Effective Mass:Γ Valley110

6.7.2 Electron Effective Mass:Satellite Valley111

6.7.3 Hole Effective Mass111

6.8 Electronic Deformation Potential111

6.8.1 Intravalley Deformation Potential:Γ Point111

6.8.2 Intravalley Deformation Potential:High-Symmetry Points112

6.8.3 Intervalley Deformation Potential112

6.9 Electron Affinity and Schottky Barrier Height112

6.9.1 Electron Affinity112

6.9.2 Schottky Barrier Height112

6.10 Optical Properties113

6.10.1 Summary of Optical Dispersion Relations113

6.10.2 The Reststrahlen Region114

6.10.3 At or Near the Fundamental Absorption Edge115

6.10.4 The Interband Transition Region117

6.10.5 Free-Carrier Absorption and Related Phenomena117

6.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties117

6.11.1 Elastooptic Effect117

6.11.2 Linear Electrooptic Constant118

6.11.3 Quadratic Electrooptic Constant118

6.11.4 Franz-Keldysh Effect118

6.11.5 Nonlinear Optical Constant118

6.12 Carrier Transport Properties119

6.12.1 Low-Field Mobility:Electrons119

6.12.2 Low-Field Mobility:Holes120

6.12.3 High-Field Transport:Electrons120

6.12.4 High-Field Transport:Holes121

6.12.5 Minority-Carrier Transport:Electrons in p-Type Materials121

6.12.6 Minority-Carrier Transport:Holes in n-Type Materials121

6.12.7 Impact Ionization Coefficient121

7 Cubic Zinc Sulphide（β-ZnS）123

7.1 Structural Properties123

7.1.1 Ionicity123

7.1.2 Elemental Isotopic Abundance and Molecular Weight123

7.1.3 Crystal Structure and Space Group124

7.1.4 Lattice Constant and Its Related Parameters124

7.1.5 Structural Phase Transition124

7.1.6 Cleavage Plane125

7.2 Thermal Properties126

7.2.1 Melting Point and Its Related Parameters126

7.2.2 Specific Heat126

7.2.3 Debye Temperature127

7.2.4 Thermal Expansion Coefficient128

7.2.5 Thermal Conductivity and Diffusivity129

7.3 Elastic Properties129

7.3.1 Elastic Constant129

7.3.2 Third-Order Elastic Constant130

7.3.3 Young's Modulus,Poisson's Ratio,and Similar130

7.3.4 Microhardness131

7.3.5 Sound Velocity131

7.4 Phonons and Lattice Vibronic Properties132

7.4.1 Phonon Dispersion Relation132

7.4.2 Phonon Frequency133

7.4.3 Mode Grüneisen Parameter134

7.4.4 Phonon Deformation Potential134

7.5 Collective Effects and Related Properties134

7.5.1 Piezoelectric Constant134

7.5.2 Fr？hlich Coupling Constant135

7.6 Energy-Band Structure:Energy-Band Gaps135

7.6.1 Basic Properties135

7.6.2 Eo-Gap Region136

7.6.3 Higher-Lying Direct Gap140

7.6.4 Lowest Indirect Gap141

7.6.5 Conduction-Valley Energy Separation141

7.6.6 Direct-Indirect-Gap Transition Pressure141

7.7 Energy-Band Structure:Electron and Hole Effective Masses142

7.7.1 Electron Effective Mass:Γ Valley142

7.7.2 Electron Effective Mass:Satellite Valley142

7.7.3 Hole Effective Mass142

7.8 Electronic Deformation Potential143

7.8.1 Intravalley Deformation Potential:Γ Point143

7.8.2 Intravalley Deformation Potential:High-Symmetry Points146

7.8.3 Intervalley Deformation Potential146

7.9 Electron Affinity and Schottky Barrier Height147

7.9.1 Electron Affinity147

7.9.2 Schottky Barrier Height147

7.10 Optical Properties147

7.10.1 Summary of Optical Dispersion Relations147

7.10.2 The Reststrahlen Region148

7.10.3 At or Near the Fundamental Absorption Edge150

7.10.4 The Interband Transition Region154

7.10.5 Free-Carrier Absorption and Related Phenomena154

7.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties154

7.11.1 Elastooptic Effect154

7.11.2 Linear Electrooptic Constant155

7.11.3 Quadratic Electrooptic Constant156

7.11.4 Franz-Keldysh Effect156

7.11.5 Nonlinear Optical Constant157

7.12 Carrier Transport Properties158

7.12.1 Low-Field Mobility:Electrons158

7.12.2 Low-Field Mobility:Holes159

7.12.3 High-Field Transport:Electrons159

7.12.4 High-Field Transport:Holes160

7.12.5 Minority-Carrier Transport:Electrons in p-Type Materials160

7.12.6 Minority-Carrier Transport:Holes in n-Type Materials160

7.12.7 Impact Ionization Coefficient160

8 Zinc Selenide（ZnSe）161

8.1 Structural Properties161

8.1.1 Ionicity161

8.1.2 Elemental Isotopic Abundance and Molecular Weight161

8.1.3 Crystal Structure and Space Group162

8.1.4 Lattice Constant and Its Related Parameters162

8.1.5 Structural Phase Transition162

8.1.6 Cleavage Plane163

8.2 Thermal Properties163

8.2.1 Melting Point and Its Related Parameters163

8.2.2 Specific Heat164

8.2.3 Debye Temperature165

8.2.4 Thermal Expansion Coefficient166

8.2.5 Thermal Conductivity and Diffusivity167

8.3 Elastic Properties168

8.3.1 Elastic Constant168

8.3.2 Third-Order Elastic Constant169

8.3.3 Young's Modulus,Poisson's Ratio,and Similar169

8.3.4 Microhardness170

8.3.5 Sound Velocity170

8.4 Phonons and Lattice Vibronic Properties171

8.4.1 Phonon Dispersion Relation171

8.4.2 Phonon Frequency172

8.4.3 Mode Grüneisen Parameter173

8.4.4 Phonon Deformation Potential174

8.5 Collective Effects and Related Properties174

8.5.1 Piezoelectric Constant174

8.5.2 Fr？hlich Coupling Constant174

8.6 Energy-Band Structure:Energy-Band Gaps175

8.6.1 Basic Properties175

8.6.2 Eo-Gap Region176

8.6.3 Higher-Lying Direct Gap180

8.6.4 Lowest Indirect Gap182

8.6.5 Conduction-Valley Energy Separation183

8.6.6 Direct-Indirect-Gap Transition Pressure184

8.7 Energy-Band Structure:Electron and Hole Effective Masses184

8.7.1 Electron Effective Mass:Γ Valley184

8.7.2 Electron Effective Mass:Satellite Valley185

8.7.3 Hole Effective Mass185

8.8 Electronic Deformation Potential186

8.8.1 Intravalley Deformation Potential:Γ Point186

8.8.2 Intravalley Deformation Potential:High-Symmetry Points189

8.8.3 Intervalley Deformation Potential190

8.9 Electron Affinity and Schottky Barrier Height191

8.9.1 Electron Affinity191

8.9.2 Schottky Barrier Height191

8.10 Optical Properties192

8.10.1 Summary of Optical Dispersion Relations192

8.10.2 The Reststrahlen Region193

8.10.3 At or Near the Fundamental Absorption Edge195

8.10.4 The Interband Transition Region199

8.10.5 Free-Carrier Absorption and Related Phenomena200

8.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties200

8.11.1 Elastooptic Effect200

8.11.2 Linear Electrooptic Constant202

8.11.3 Quadratic Electrooptic Constant202

8.11.4 Franz-Keldysh Effect202

8.11.5 Nonlinear Optical Constant203

8.12 Carrier Transport Properties205

8.12.1 Low-Field Mobility:Electrons205

8.12.2 Low-Field Mobility:Holes206

8.12.3 High-Field Transport:Electrons207

8.12.4 High-Field Transport:Holes208

8.12.5 Minority-Carrier Transport:Electrons in p-Type Materials208

8.12.6 Minority-Carrier Transport:Holes in n-Type Materials208

8.12.7 Impact Ionization Coefficient209

9 Zinc Telluride（ZnTe）211

9.1 Structural Properties211

9.1.1 Ionicity211

9.1.2 Elemental Isotopic Abundance and Molecular Weight211

9.1.3 Crystal Structure and Space Group212

9.1.4 Lattice Constant and Its Related Parameters212

9.1.5 Structural Phase Transition212

9.1.6 Cleavage Plane213

9.2 Thermal Properties214

9.2.1 Melting Point and Its Related Parameters214

9.2.2 Specific Heat214

9.2.3 Debye Temperature216

9.2.4 Thermal Expansion Coefficient216

9.2.5 Thermal Conductivity and Diffusivity218

9.3 Elastic Properties218

9.3.1 Elastic Constant218

9.3.2 Third-Order Elastic Constant219

9.3.3 Young's Modulus,Poisson's Ratio,and Similar219

9.3.4 Microhardness220

9.3.5 Sound Velocity221

9.4 Phonons and Lattice Vibronic Properties221

9.4.1 Phonon Dispersion Relation221

9.4.2 Phonon Frequency222

9.4.3 Mode Grüneisen Parameter223

9.4.4 Phonon Deformation Potential224

9.5 Collective Effects and Related Properties224

9.5.1 Piezoelectric Constant224

9.5.2 Fr？hlich Coupling Constant225

9.6 Energy-Band Structure:Energy-Band Gaps225

9.6.1 Basic Properties225

9.6.2 Eo-Gap Region226

9.6.3 Higher-Lying Direct Gap230

9.6.4 Lowest Indirect Gao233

9.6.5 Conduction-Valley Energy Separation233

9.6.6 Direct-Indirect-Gap Transition Pressure234

9.7 Energy-Band Structure:Electron and Hole Effective Masses234

9.7.1 Electron Effective Mass:Γ Valley234

9.7.2 Electron Effective Mass:Satellite Valley234

9.7.3 Hole Effective Mass235

9.8 Electronic Deformation Potential236

9.8.1 Intravalley Deformation Potential:Γ Point236

9.8.2 Intravalley Deformation Potential:High-Symmetry Points238

9.8.3 Intervalley Deformation Potential239

9.9 Electron Affinity and Schottky Barrier Height240

9.9.1 Electron Affinity240

9.9.2 Schottky Barrier Height240

9.10 Optical Properties241

9.10.1 Summary of Optical Dispersion Relations241

9.10.2 The Reststrahlen Region242

9.10.3 At or Near the Fundamental Absorption Edge243

9.10.4 The Interband Transition Region246

9.10.5 Free-Carrier Absorption and Related Phenomena247

9.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties247

9.11.1 Elastooptic Effect247

9.11.2 Linear Electrooptic Constant248

9.11.3 Quadratic Electrooptic Constant249

9.11.4 Franz-Keldysh Effect249

9.11.5 Nonlinear Optical Constant249

9.12 Carrier Transport Properties250

9.12.1 Low-Field Mobility:Electrons250

9.12.2 Low-Field Mobility:Holes251

9.12.3 High-Field Transport:Electrons252

9.12.4 High-Field Transport:Holes253

9.12.5 Minority-Carrier Transport:Electrons in p-Type Materials253

9.12.6 Minority-Carrier Transport:Holes in n-Type Materials253

9.12.7 Impact Ionization Coefficient253